unisonic technologies co., ltd 13003df preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r223-014.c npn silicon bipolar transistors for low frequency amplification ? description the utc 13003df is a silicon npn power switching transistor; it uses utc?s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. the utc 13003df is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light. ? features * high collector-base breakdown voltage * low reverse leakage current * high reliability ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13003dfl-xx-t60-k 13003dfg-xx-t60-k to-126 b c e bulk 13003dfl-xx-t92-b 13003dfg-xx-t92-b to-92 e c b tape box 13003dfl-xx-t92-k 13003dfg-xx-t92-k to-92 e c b bulk note: pin assignment: b: base c: collector e: emitter (1) b: bluk, k: bulk (2) t60: to-126, t92: to-92 (3) xx: refer to classification of h fe vs. ts (4) l: lead free, g: halogen free 13003dfl -xx -t60 -k (1)packing type (2)package type (3)rank (4)lead free
13003df preliminary npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r223-014.c ? marking information package marking to-126 to-92
13003df preliminary npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r223-014.c ? absolute maximum ratings (t a =25 c, unless otherwise noted) parameter symbol ratings unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v continuous collector current i c 1.5 a power dissipation t a =25c p d 1.25 w t c =25c 50 w junction temperature t j 150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? electrical characteristics (t a =25 c, unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =0.1ma 600 v collector-emitter breakdown voltage bv ceo i c =1ma 400 v emitter-base breakdown voltage bv ebo i e =0.1ma 9 v collector cut-off current i cbo v cb =600v, i e =0 0.1 ma collector-emitter cut-off current i ceo v ce =400v, i b =0 0.1 ma emitter-base cut-off current i ebo v eb =9v, i c =0 0.1 ma dc current gain (note 1) h fe v ce =5v, i c =0.2a 15 30 low current and high current h fe2 h fe1 ratio h fe1 / h fe2 h fe1 : v ce =5v, i c =5ma 0.75 0.9 h fe2 : v ce =5v, i c =0.2a collector-emitter saturati on voltage (note) v ce ( sat ) i c =1a, i b =0.25a 0.3 0.9 v base-emitter saturation voltage (note) v be ( sat ) i c =1a, i b =0.25a 0.9 1.2 v storage time t s ui9600, i c =0.1a 3 5 s rise time t r 1 s fall time t f 1 s transition frequency f t i c =0.1a, v ce =10v, f=1mhz 5 mhz note: pulse test, pulse width tp 300s, duty cycle 2% ? classification of h fe rank a b c range 15 ~ 20 20 ~ 25 25 ~ 30
13003df preliminary npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r223-014.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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